FDG326P
- Mfr.Part #
- FDG326P
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 1.5A SC88
- Stock
- 32,457
- In Stock :
- 32,457
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- MATTE TIN
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- P-Channel
- Drain-source On Resistance-Max :
- 0.14Ohm
- Drain Current-Max (Abs) (ID) :
- 1.5A
- Series :
- PowerTrench®
- Input Capacitance (Ciss) (Max) @ Vds :
- 467pF @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Reach Compliance Code :
- Unknown
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 1.5A, 4.5V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 6
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Ta
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 6
- Terminal Form :
- Gull wing
- DS Breakdown Voltage-Min :
- 20V
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- JESD-30 Code :
- R-PDSO-G6
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 750mW Ta
- Vgs (Max) :
- ±8V
- Peak Reflow Temperature (Cel) :
- 260
- Gate Charge (Qg) (Max) @ Vgs :
- 7nC @ 4.5V
- Drain to Source Voltage (Vdss) :
- 20V
- Qualification Status :
- COMMERCIAL
- Datasheets
- FDG326P

P-Channel Tape & Reel (TR) 140m Ω @ 1.5A, 4.5V ±8V 467pF @ 10V 7nC @ 4.5V 20V 6-TSSOP, SC-88, SOT-363
FDG326P Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 467pF @ 10V.There is no drain current on this device since the maximum continuous current it can conduct is 1.5A.In order for DS breakdown voltage to remain above 20V, it should remain above the 20V level.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
FDG326P Features
a 20V drain to source voltage (Vdss)
FDG326P Applications
There are a lot of Rochester Electronics, LLC
FDG326P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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