FDG329N
- Mfr.Part #
- FDG329N
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 1.5A SC88
- Stock
- 34,248
- In Stock :
- 34,248
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 1.5A, 4.5V
- Number of Terminations :
- 6
- Drain to Source Voltage (Vdss) :
- 20V
- Series :
- PowerTrench®
- Input Capacitance (Ciss) (Max) @ Vds :
- 324pF @ 10V
- Qualification Status :
- COMMERCIAL
- Drain-source On Resistance-Max :
- 0.09Ohm
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- DS Breakdown Voltage-Min :
- 20V
- Power Dissipation-Max :
- 420mW Ta
- Pin Count :
- 6
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Terminal Finish :
- MATTE TIN
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±12V
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Ta
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Reach Compliance Code :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PDSO-G6
- Gate Charge (Qg) (Max) @ Vgs :
- 4.6nC @ 4.5V
- Peak Reflow Temperature (Cel) :
- 260
- Drain Current-Max (Abs) (ID) :
- 1.5A
- Datasheets
- FDG329N

N-Channel Tape & Reel (TR) 90m Ω @ 1.5A, 4.5V ±12V 324pF @ 10V 4.6nC @ 4.5V 20V 6-TSSOP, SC-88, SOT-363
FDG329N Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 324pF @ 10V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 1.5A.Normal operation requires that the DS breakdown voltage remain above 20V.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.
FDG329N Features
a 20V drain to source voltage (Vdss)
FDG329N Applications
There are a lot of Rochester Electronics, LLC
FDG329N applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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