FDFME2P823ZT

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-20V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

142m Ω @ 2.3A, 4.5V

Element Configuration :

Single

Rise Time :

4.8ns

Power Dissipation-Max :

1.4W Ta

Turn-Off Delay Time :

33 ns

Number of Terminations :

6

FET Feature :

Schottky Diode (Isolated)

Mount :

Surface Mount

Vgs (Max) :

±8V

Number of Pins :

6

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

405pF @ 10V

Width :

1.6mm

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Feedback Cap-Max (Crss) :

75 pF

Nominal Vgs :

-600 mV

Continuous Drain Current (ID) :

2.6A

REACH SVHC :

No SVHC

Drain Current-Max (Abs) (ID) :

2.3A

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Power Dissipation :

1.3W

ECCN Code :

EAR99

Terminal Position :

Dual

Fall Time (Typ) :

16 ns

FET Type :

P-Channel

Transistor Element Material :

SILICON

Radiation Hardening :

No

Package / Case :

6-UFDFN Exposed Pad

Additional Feature :

ESD Protection

Vgs(th) (Max) @ Id :

1V @ 250μA

Turn On Delay Time :

4.7 ns

Threshold Voltage :

-600mV

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 4.5V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Length :

1.6mm

Height :

550μm

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

8V

Series :

PowerTrench®