FDFM2N111

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

Schottky Diode (Isolated)

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

20V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Voltage - Rated DC :

20V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Terminal Finish :

Nickel/Palladium (Ni/Pd)

Weight :

165.33333mg

Number of Pins :

6

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

2V

Vgs (Max) :

±12V

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.7W Ta

Operating Temperature :

-55°C~150°C TJ

Height :

750μm

Current Rating :

4A

Rise Time :

7ns

Rds On (Max) @ Id, Vgs :

100m Ω @ 4A, 4.5V

Drain Current-Max (Abs) (ID) :

4A

Mounting Type :

Surface Mount

Length :

3mm

Gate to Source Voltage (Vgs) :

12V

Turn-Off Delay Time :

11 ns

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

3.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

273pF @ 10V

Radiation Hardening :

No

Package / Case :

6-WDFN Exposed Pad

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Lead Free :

Lead Free

JESD-609 Code :

e4

Continuous Drain Current (ID) :

4A

Packaging :

Tape and Reel (TR)

Width :

3mm

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Fall Time (Typ) :

7 ns

Transistor Element Material :

SILICON

FET Type :

N-Channel

ECCN Code :

EAR99

Power Dissipation :

1.7W

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Element Configuration :

Single

Turn On Delay Time :

6 ns