FDFMA3N109

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Mfr.Part #
FDFMA3N109
Manufacturer
onsemi
Package / Case
6-VDFN Exposed Pad
Datasheet
Download
Description
MOSFET N-CH 30V 2.9A 6MICROFET
Stock
76,049
In Stock :
76,049

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Number of Pins :
6
Weight :
60mg
Terminal Finish :
Nickel/Gold/Palladium/Silver (Ni/Au/Pd/Ag)
Rds On (Max) @ Id, Vgs :
123m Ω @ 2.9A, 4.5V
Radiation Hardening :
No
FET Feature :
Schottky Diode (Isolated)
REACH SVHC :
No SVHC
Factory Lead Time :
16 Weeks
Height :
750μm
Power Dissipation :
1.5W
Gate Charge (Qg) (Max) @ Vgs :
3nC @ 4.5V
Turn-Off Delay Time :
12 ns
Width :
2mm
Case Connection :
DRAIN
Series :
PowerTrench®
Package / Case :
6-VDFN Exposed Pad
Resistance :
123mOhm
ECCN Code :
EAR99
Lead Free :
Lead Free
Pbfree Code :
yes
Turn On Delay Time :
6 ns
Transistor Element Material :
SILICON
FET Type :
N-Channel
Packaging :
Tape and Reel (TR)
Fall Time (Typ) :
8 ns
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Drain to Source Breakdown Voltage :
30V
Voltage - Rated DC :
30V
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Vgs (Max) :
±12V
Continuous Drain Current (ID) :
2.9A
Input Capacitance (Ciss) (Max) @ Vds :
220pF @ 15V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Power Dissipation-Max :
1.5W Ta
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Threshold Voltage :
1V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Terminal Position :
Dual
Current Rating :
2.9A
Number of Terminations :
6
Current - Continuous Drain (Id) @ 25°C :
2.9A Tc
Feedback Cap-Max (Crss) :
30 pF
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Length :
2mm
Gate to Source Voltage (Vgs) :
12V
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
8ns
Introducing Transistors - FETs, MOSFETs - Single onsemi FDFMA3N109 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Package / Case:6-VDFN Exposed Pad, Number of Terminations:6, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FDFMA3N109 pinout, FDFMA3N109 datasheet PDF, FDFMA3N109 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDFMA3N109 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDFMA3N109


N-Channel Tape & Reel (TR) 123m Ω @ 2.9A, 4.5V ±12V 220pF @ 15V 3nC @ 4.5V 6-VDFN Exposed Pad

FDFMA3N109 Description


The FDFMA3N109 is a single-package solution for boosting topologies in cellular handsets and other ultra-portable applications. To improve boost efficiency, it includes a MOSFET with low input capacitance, total gate charge, and on-state resistance, as well as an independently linked Schottky diode with low forward voltage and reverse leakage current. The MicroFET 2x2 package has excellent thermal performance for its physical size, making it ideal for switching and linear mode applications.



FDFMA3N109 Features


  • 2.9 A, 30 V

  • RDS(ON) = 123 mΩ @ VGS = 4.5 V

  • RDS(ON) = 140 mΩ @ VGS = 3.0 V

  • RDS(ON) = 163 mΩ @ VGS = 2.5

  • VF < 0.46 V @ 500mA

  • Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm

  • HBM ESD protection level = 1.8kV typical (Note 3)

  • RoHS Compliant



FDFMA3N109 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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