FDFMA3N109
- Mfr.Part #
- FDFMA3N109
- Manufacturer
- onsemi
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 2.9A 6MICROFET
- Stock
- 76,049
- In Stock :
- 76,049
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Threshold Voltage :
- 1V
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 12V
- Gate Charge (Qg) (Max) @ Vgs :
- 3nC @ 4.5V
- Radiation Hardening :
- No
- Width :
- 2mm
- Continuous Drain Current (ID) :
- 2.9A
- FET Feature :
- Schottky Diode (Isolated)
- ECCN Code :
- EAR99
- Resistance :
- 123mOhm
- Number of Terminations :
- 6
- Length :
- 2mm
- Rds On (Max) @ Id, Vgs :
- 123m Ω @ 2.9A, 4.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 6 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Weight :
- 60mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 220pF @ 15V
- Series :
- PowerTrench®
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 2.9A
- Height :
- 750μm
- Power Dissipation-Max :
- 1.5W Ta
- Vgs (Max) :
- ±12V
- Terminal Finish :
- Nickel/Gold/Palladium/Silver (Ni/Au/Pd/Ag)
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 30V
- Package / Case :
- 6-VDFN Exposed Pad
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 16 Weeks
- Power Dissipation :
- 1.5W
- Turn-Off Delay Time :
- 12 ns
- Drain to Source Breakdown Voltage :
- 30V
- Feedback Cap-Max (Crss) :
- 30 pF
- Transistor Application :
- SWITCHING
- Rise Time :
- 8ns
- Pbfree Code :
- yes
- Number of Pins :
- 6
- Fall Time (Typ) :
- 8 ns
- Current - Continuous Drain (Id) @ 25°C :
- 2.9A Tc
- Datasheets
- FDFMA3N109
FDFMA3N109 Documents

N-Channel Tape & Reel (TR) 123m Ω @ 2.9A, 4.5V ±12V 220pF @ 15V 3nC @ 4.5V 6-VDFN Exposed Pad
FDFMA3N109 Description
The FDFMA3N109 is a single-package solution for boosting topologies in cellular handsets and other ultra-portable applications. To improve boost efficiency, it includes a MOSFET with low input capacitance, total gate charge, and on-state resistance, as well as an independently linked Schottky diode with low forward voltage and reverse leakage current. The MicroFET 2x2 package has excellent thermal performance for its physical size, making it ideal for switching and linear mode applications.
FDFMA3N109 Features
-
2.9 A, 30 V
-
RDS(ON) = 123 mΩ @ VGS = 4.5 V
-
RDS(ON) = 140 mΩ @ VGS = 3.0 V
-
RDS(ON) = 163 mΩ @ VGS = 2.5
-
VF < 0.46 V @ 500mA
-
Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm
-
HBM ESD protection level = 1.8kV typical (Note 3)
-
RoHS Compliant
FDFMA3N109 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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