FDFMA3N109

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Mfr.Part #
FDFMA3N109
Manufacturer
onsemi
Package / Case
6-VDFN Exposed Pad
Datasheet
Download
Description
MOSFET N-CH 30V 2.9A 6MICROFET
Stock
76,049
In Stock :
76,049

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Threshold Voltage :
1V
Packaging :
Tape and Reel (TR)
Terminal Position :
Dual
Number of Elements :
1
Gate to Source Voltage (Vgs) :
12V
Gate Charge (Qg) (Max) @ Vgs :
3nC @ 4.5V
Radiation Hardening :
No
Width :
2mm
Continuous Drain Current (ID) :
2.9A
FET Feature :
Schottky Diode (Isolated)
ECCN Code :
EAR99
Resistance :
123mOhm
Number of Terminations :
6
Length :
2mm
Rds On (Max) @ Id, Vgs :
123m Ω @ 2.9A, 4.5V
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
6 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Element Configuration :
Single
Mount :
Surface Mount
Weight :
60mg
Input Capacitance (Ciss) (Max) @ Vds :
220pF @ 15V
Series :
PowerTrench®
Lead Free :
Lead Free
FET Type :
N-Channel
Case Connection :
DRAIN
Operating Temperature :
-55°C~150°C TJ
Current Rating :
2.9A
Height :
750μm
Power Dissipation-Max :
1.5W Ta
Vgs (Max) :
±12V
Terminal Finish :
Nickel/Gold/Palladium/Silver (Ni/Au/Pd/Ag)
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Voltage - Rated DC :
30V
Package / Case :
6-VDFN Exposed Pad
Mounting Type :
Surface Mount
Factory Lead Time :
16 Weeks
Power Dissipation :
1.5W
Turn-Off Delay Time :
12 ns
Drain to Source Breakdown Voltage :
30V
Feedback Cap-Max (Crss) :
30 pF
Transistor Application :
SWITCHING
Rise Time :
8ns
Pbfree Code :
yes
Number of Pins :
6
Fall Time (Typ) :
8 ns
Current - Continuous Drain (Id) @ 25°C :
2.9A Tc
Introducing Transistors - FETs, MOSFETs - Single onsemi FDFMA3N109 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Operating Temperature:-55°C~150°C TJ, Package / Case:6-VDFN Exposed Pad, Mounting Type:Surface Mount, Number of Pins:6, FDFMA3N109 pinout, FDFMA3N109 datasheet PDF, FDFMA3N109 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDFMA3N109 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDFMA3N109


N-Channel Tape & Reel (TR) 123m Ω @ 2.9A, 4.5V ±12V 220pF @ 15V 3nC @ 4.5V 6-VDFN Exposed Pad

FDFMA3N109 Description


The FDFMA3N109 is a single-package solution for boosting topologies in cellular handsets and other ultra-portable applications. To improve boost efficiency, it includes a MOSFET with low input capacitance, total gate charge, and on-state resistance, as well as an independently linked Schottky diode with low forward voltage and reverse leakage current. The MicroFET 2x2 package has excellent thermal performance for its physical size, making it ideal for switching and linear mode applications.



FDFMA3N109 Features


  • 2.9 A, 30 V

  • RDS(ON) = 123 mΩ @ VGS = 4.5 V

  • RDS(ON) = 140 mΩ @ VGS = 3.0 V

  • RDS(ON) = 163 mΩ @ VGS = 2.5

  • VF < 0.46 V @ 500mA

  • Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm

  • HBM ESD protection level = 1.8kV typical (Note 3)

  • RoHS Compliant



FDFMA3N109 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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