FDFMA3N109

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Width :

2mm

Turn On Delay Time :

6 ns

Power Dissipation :

1.5W

Element Configuration :

Single

Continuous Drain Current (ID) :

2.9A

Number of Terminations :

6

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Lead Free :

Lead Free

Threshold Voltage :

1V

Transistor Application :

SWITCHING

Mount :

Surface Mount

FET Feature :

Schottky Diode (Isolated)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Number of Pins :

6

Height :

750μm

Series :

PowerTrench®

Current - Continuous Drain (Id) @ 25°C :

2.9A Tc

Voltage - Rated DC :

30V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

123m Ω @ 2.9A, 4.5V

Length :

2mm

Vgs (Max) :

±12V

Fall Time (Typ) :

8 ns

Weight :

60mg

Current Rating :

2.9A

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

12V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Elements :

1

Rise Time :

8ns

Turn-Off Delay Time :

12 ns

Terminal Position :

Dual

Feedback Cap-Max (Crss) :

30 pF

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Package / Case :

6-VDFN Exposed Pad

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

Terminal Finish :

Nickel/Gold/Palladium/Silver (Ni/Au/Pd/Ag)

Resistance :

123mOhm

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Radiation Hardening :

No

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.5W Ta

RoHS Status :

ROHS3 Compliant