FDFMA3N109

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

123mOhm

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

Lead Free :

Lead Free

Case Connection :

DRAIN

FET Feature :

Schottky Diode (Isolated)

Pbfree Code :

yes

Continuous Drain Current (ID) :

2.9A

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

123m Ω @ 2.9A, 4.5V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Elements :

1

Current Rating :

2.9A

Power Dissipation-Max :

1.5W Ta

Current - Continuous Drain (Id) @ 25°C :

2.9A Tc

Length :

2mm

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

8ns

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Turn-Off Delay Time :

12 ns

Turn On Delay Time :

6 ns

Number of Terminations :

6

Operating Temperature :

-55°C~150°C TJ

Feedback Cap-Max (Crss) :

30 pF

Width :

2mm

Element Configuration :

Single

Terminal Finish :

Nickel/Gold/Palladium/Silver (Ni/Au/Pd/Ag)

Fall Time (Typ) :

8 ns

Factory Lead Time :

16 Weeks

REACH SVHC :

No SVHC

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

30V

RoHS Status :

ROHS3 Compliant

Weight :

60mg

Number of Pins :

6

Series :

PowerTrench®

Package / Case :

6-VDFN Exposed Pad

Gate to Source Voltage (Vgs) :

12V

ECCN Code :

EAR99

Height :

750μm

Power Dissipation :

1.5W

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Vgs (Max) :

±12V

Threshold Voltage :

1V