FDFM2P110

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Terminal Finish :

Nickel/Palladium (Ni/Pd)

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

20V

Element Configuration :

Single

Weight :

9mg

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Rds On (Max) @ Id, Vgs :

140m Ω @ 3.5A, 4.5V

Radiation Hardening :

No

Lead Free :

Lead Free

Voltage - Rated DC :

-20V

Current Rating :

-3.5A

Drain to Source Breakdown Voltage :

-20V

Length :

3mm

Turn On Delay Time :

8 ns

Rise Time :

12ns

Width :

3mm

ECCN Code :

EAR99

Package / Case :

6-WDFN Exposed Pad

Turn-Off Delay Time :

11 ns

Operating Temperature :

-55°C~150°C TJ

Series :

PowerTrench®

Pbfree Code :

yes

Number of Elements :

1

Continuous Drain Current (ID) :

3.5A

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

Transistor Application :

SWITCHING

JEDEC-95 Code :

MO-229WEEA

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Resistance :

140mOhm

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 10V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Height :

750μm

FET Feature :

Schottky Diode (Isolated)

FET Type :

P-Channel

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Terminations :

6

Terminal Position :

Dual

Power Dissipation :

2W

Power Dissipation-Max :

2W Ta

Mount :

Surface Mount

JESD-609 Code :

e4

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

3.2 ns