FDFMA2P853T
- Mfr.Part #
- FDFMA2P853T
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 6-UDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3A MICROFET
- Stock
- 32,850
- In Stock :
- 32,850
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- JESD-30 Code :
- S-PDSO-C6
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- FET Type :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1.3V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 20V
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e4
- DS Breakdown Voltage-Min :
- 20V
- Surface Mount :
- yes
- Series :
- PowerTrench®
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.12Ohm
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 3A, 4.5V
- Number of Elements :
- 1
- Terminal Form :
- C BEND
- Vgs (Max) :
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds :
- 435pF @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Feature :
- Schottky Diode (Isolated)
- Package / Case :
- 6-UDFN Exposed Pad
- Number of Terminations :
- 6
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 4.5V
- Pin Count :
- 6
- Power Dissipation-Max :
- 1.4W Ta
- Qualification Status :
- COMMERCIAL
- Pulsed Drain Current-Max (IDM) :
- 6A
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- FDFMA2P853T

P-Channel Tape & Reel (TR) 120m Ω @ 3A, 4.5V ±8V 435pF @ 10V 6nC @ 4.5V 20V 6-UDFN Exposed Pad
FDFMA2P853T Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 435pF @ 10V.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 6A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 20V in order to maintain normal operation.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
FDFMA2P853T Features
based on its rated peak drain current 6A.
a 20V drain to source voltage (Vdss)
FDFMA2P853T Applications
There are a lot of Rochester Electronics, LLC
FDFMA2P853T applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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