FDFMA2P853T

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±8V

Surface Mount :

yes

Mounting Type :

Surface Mount

Terminal Position :

Dual

Transistor Element Material :

SILICON

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

6A

DS Breakdown Voltage-Min :

20V

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

JESD-30 Code :

S-PDSO-C6

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Rds On (Max) @ Id, Vgs :

120m Ω @ 3A, 4.5V

Terminal Form :

C BEND

Series :

PowerTrench®

Terminal Finish :

NICKEL PALLADIUM GOLD

Power Dissipation-Max :

1.4W Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

435pF @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.12Ohm

Number of Elements :

1

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~150°C TJ

Package / Case :

6-UDFN Exposed Pad

FET Type :

P-Channel

Number of Terminations :

6

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

FET Feature :

Schottky Diode (Isolated)

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e4