FDFMA3P029Z
- Mfr.Part #
- FDFMA3P029Z
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 3.3A 6MICROFET
- Stock
- 269
- In Stock :
- 269
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- -30V
- Fall Time (Typ) :
- 11 ns
- Power Dissipation :
- 1.4W
- Package / Case :
- 6-VDFN Exposed Pad
- Input Capacitance (Ciss) (Max) @ Vds :
- 435pF @ 15V
- FET Feature :
- Schottky Diode (Isolated)
- Number of Elements :
- 1
- Rise Time :
- 3ns
- Number of Pins :
- 6
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 3.3A Ta
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Series :
- PowerTrench®
- Gate to Source Voltage (Vgs) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- P-Channel
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Continuous Drain Current (ID) :
- 3.3A
- Turn-Off Delay Time :
- 17 ns
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 87m Ω @ 3.3A, 10V
- JESD-609 Code :
- e4
- Packaging :
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Published :
- 2006
- Power Dissipation-Max :
- 1.4W Ta
- Datasheets
- FDFMA3P029Z

P-Channel Cut Tape (CT) 87m Ω @ 3.3A, 10V 435pF @ 15V 10nC @ 10V 30V 6-VDFN Exposed Pad
FDFMA3P029Z Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 435pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-30V. And this device has -30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.Operating this transistor requires a 30V drain to source voltage (Vdss).
FDFMA3P029Z Features
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 17 ns
a 30V drain to source voltage (Vdss)
FDFMA3P029Z Applications
There are a lot of ON Semiconductor
FDFMA3P029Z applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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