FDFMA3P029Z

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Mfr.Part #
FDFMA3P029Z
Manufacturer
Fairchild Semiconductor
Package / Case
6-VDFN Exposed Pad
Datasheet
Download
Description
MOSFET P-CH 30V 3.3A 6MICROFET
Stock
269
In Stock :
269

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
30V
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
-30V
Fall Time (Typ) :
11 ns
Power Dissipation :
1.4W
Package / Case :
6-VDFN Exposed Pad
Input Capacitance (Ciss) (Max) @ Vds :
435pF @ 15V
FET Feature :
Schottky Diode (Isolated)
Number of Elements :
1
Rise Time :
3ns
Number of Pins :
6
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
3.3A Ta
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Series :
PowerTrench®
Gate to Source Voltage (Vgs) :
25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
P-Channel
Vgs(th) (Max) @ Id :
3V @ 250µA
Continuous Drain Current (ID) :
3.3A
Turn-Off Delay Time :
17 ns
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
87m Ω @ 3.3A, 10V
JESD-609 Code :
e4
Packaging :
Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Published :
2006
Power Dissipation-Max :
1.4W Ta
Datasheets
FDFMA3P029Z
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDFMA3P029Z from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:6-VDFN Exposed Pad, Number of Pins:6, Operating Temperature:-55°C~150°C TJ, FDFMA3P029Z pinout, FDFMA3P029Z datasheet PDF, FDFMA3P029Z amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDFMA3P029Z ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDFMA3P029Z


P-Channel Cut Tape (CT) 87m Ω @ 3.3A, 10V 435pF @ 15V 10nC @ 10V 30V 6-VDFN Exposed Pad

FDFMA3P029Z Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 435pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-30V. And this device has -30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.Operating this transistor requires a 30V drain to source voltage (Vdss).

FDFMA3P029Z Features


a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 17 ns
a 30V drain to source voltage (Vdss)


FDFMA3P029Z Applications


There are a lot of ON Semiconductor
FDFMA3P029Z applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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