FDFMA2P029Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

2mm

JESD-609 Code :

e4

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Rds On (Max) @ Id, Vgs :

95m Ω @ 3.1A, 4.5V

Continuous Drain Current (ID) :

-3.1A

Rise Time :

11ns

Transistor Application :

SWITCHING

Turn-Off Delay Time :

37 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

3.1A Ta

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

16 Weeks

JEDEC-95 Code :

MO-229VCCC

Power Dissipation :

1.4W

Transistor Element Material :

SILICON

Vgs (Max) :

±12V

Voltage - Rated DC :

-20V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Package / Case :

6-VDFN Exposed Pad

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Terminal Position :

Dual

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

720pF @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain to Source Breakdown Voltage :

20V

Current Rating :

-3.1A

Number of Elements :

1

Turn On Delay Time :

13 ns

Weight :

40mg

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

6

Radiation Hardening :

No

FET Feature :

Schottky Diode (Isolated)

Fall Time (Typ) :

11 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Mount :

Surface Mount

Number of Terminations :

6

Case Connection :

DRAIN

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

12V

Resistance :

95mOhm

ECCN Code :

EAR99

Power Dissipation-Max :

1.4W Tj

Width :

2mm

Element Configuration :

Single

Height :

750μm