FDFMA2N028Z
- Mfr.Part #
- FDFMA2N028Z
- Manufacturer
- onsemi
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 3.7A 6MICROFET
- Stock
- 3,154
- In Stock :
- 3,154
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- JESD-609 Code :
- e4
- Vgs (Max) :
- ±12V
- FET Type :
- N-Channel
- Number of Pins :
- 6
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 16 Weeks
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 1.4W Tj
- Terminal Position :
- Dual
- Turn On Delay Time :
- 8 ns
- Rds On (Max) @ Id, Vgs :
- 68m Ω @ 3.7A, 4.5V
- Series :
- PowerTrench®
- Turn-Off Delay Time :
- 14 ns
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 4.5V
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Threshold Voltage :
- 1V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- ECCN Code :
- EAR99
- Number of Terminations :
- 6
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Fall Time (Typ) :
- 8 ns
- Packaging :
- Tape and Reel (TR)
- FET Feature :
- Schottky Diode (Isolated)
- REACH SVHC :
- No SVHC
- Height :
- 750μm
- Package / Case :
- 6-VDFN Exposed Pad
- Mount :
- Surface Mount
- Length :
- 2mm
- Voltage - Rated DC :
- 20V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 60mg
- Width :
- 2mm
- Resistance :
- 68mOhm
- Continuous Drain Current (ID) :
- 3.7A
- Feedback Cap-Max (Crss) :
- 90 pF
- Gate to Source Voltage (Vgs) :
- 12V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 455pF @ 10V
- Rise Time :
- 8ns
- Current - Continuous Drain (Id) @ 25°C :
- 3.7A Ta
- Drain to Source Breakdown Voltage :
- 20V
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.4W
- Current Rating :
- 3.7A
- Datasheets
- FDFMA2N028Z

N-Channel Tape & Reel (TR) 68m Ω @ 3.7A, 4.5V ±12V 455pF @ 10V 6nC @ 4.5V 6-VDFN Exposed Pad
FDFMA2N028Z Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 455pF @ 10V.This device has a continuous drain current (ID) of [3.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=20V, the drain-source breakdown voltage is 20V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 14 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
FDFMA2N028Z Features
a continuous drain current (ID) of 3.7A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 14 ns
a threshold voltage of 1V
FDFMA2N028Z Applications
There are a lot of ON Semiconductor
FDFMA2N028Z applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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