FDFMA2P853
- Mfr.Part #
- FDFMA2P853
- Manufacturer
- onsemi
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3A 6MICROFET
- Stock
- 8,272
- In Stock :
- 8,272
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 2V
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 3A, 4.5V
- Number of Pins :
- 6
- FET Type :
- P-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Gate to Source Voltage (Vgs) :
- 8V
- Length :
- 2mm
- Resistance :
- 120mOhm
- Power Dissipation :
- 1.4W
- Continuous Drain Current (ID) :
- 3A
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Series :
- PowerTrench®
- Turn On Delay Time :
- 9 ns
- Vgs(th) (Max) @ Id :
- 1.3V @ 250µA
- Drain to Source Breakdown Voltage :
- 20V
- Drain Current-Max (Abs) (ID) :
- 2.2A
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 1.4W Ta
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 15 ns
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 6
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 4.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JESD-609 Code :
- e4
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- FET Feature :
- Schottky Diode (Isolated)
- Factory Lead Time :
- 16 Weeks
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Height :
- 750μm
- Fall Time (Typ) :
- 11 ns
- Package / Case :
- 6-VDFN Exposed Pad
- Mount :
- Surface Mount
- JEDEC-95 Code :
- MO-229VCCC
- Pbfree Code :
- yes
- Weight :
- 40mg
- Width :
- 2mm
- Rise Time :
- 11ns
- Vgs (Max) :
- ±8V
- Radiation Hardening :
- No
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 435pF @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Datasheets
- FDFMA2P853

P-Channel Tape & Reel (TR) 120m Ω @ 3A, 4.5V ±8V 435pF @ 10V 6nC @ 4.5V 6-VDFN Exposed Pad
FDFMA2P853 Description
This FDFMA2P853 is designed specifically as a single package solution for the battery charge switch in cellular handsets and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage Schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
FDFMA2P853 Features
-
-3.0 A, -20V.
-
RDS(ON) = 120 mΩ @ VGS = -4.5 V
-
RDS(ON) = 160 mΩ @ VGS = -2.5 V
-
RDS(ON) = 240 mΩ @ VGS = -1.8 V
-
VF < 0.46 V @ 500 mA
-
Low Profile - 0.8 mm maximun - in the new packageMicroFET 2x2 mm
-
RoHS Compliant
FDFMA2P853 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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