FDFMA2P853

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Mfr.Part #
FDFMA2P853
Manufacturer
onsemi
Package / Case
6-VDFN Exposed Pad
Datasheet
Download
Description
MOSFET P-CH 20V 3A 6MICROFET
Stock
8,272
In Stock :
8,272

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Dual
Collector Emitter Breakdown Voltage :
2V
Rds On (Max) @ Id, Vgs :
120m Ω @ 3A, 4.5V
Number of Pins :
6
FET Type :
P-Channel
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
3A Ta
Gate to Source Voltage (Vgs) :
8V
Length :
2mm
Resistance :
120mOhm
Power Dissipation :
1.4W
Continuous Drain Current (ID) :
3A
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Series :
PowerTrench®
Turn On Delay Time :
9 ns
Vgs(th) (Max) @ Id :
1.3V @ 250µA
Drain to Source Breakdown Voltage :
20V
Drain Current-Max (Abs) (ID) :
2.2A
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Power Dissipation-Max :
1.4W Ta
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
15 ns
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Number of Terminations :
6
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 4.5V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
JESD-609 Code :
e4
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
FET Feature :
Schottky Diode (Isolated)
Factory Lead Time :
16 Weeks
Number of Elements :
1
Transistor Element Material :
SILICON
Height :
750μm
Fall Time (Typ) :
11 ns
Package / Case :
6-VDFN Exposed Pad
Mount :
Surface Mount
JEDEC-95 Code :
MO-229VCCC
Pbfree Code :
yes
Weight :
40mg
Width :
2mm
Rise Time :
11ns
Vgs (Max) :
±8V
Radiation Hardening :
No
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
435pF @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Datasheets
FDFMA2P853
Introducing Transistors - FETs, MOSFETs - Single onsemi FDFMA2P853 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:6, Package / Case:6-VDFN Exposed Pad, FDFMA2P853 pinout, FDFMA2P853 datasheet PDF, FDFMA2P853 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDFMA2P853 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDFMA2P853


P-Channel Tape & Reel (TR) 120m Ω @ 3A, 4.5V ±8V 435pF @ 10V 6nC @ 4.5V 6-VDFN Exposed Pad

FDFMA2P853 Description


This FDFMA2P853 is designed specifically as a single package solution for the battery charge switch in cellular handsets and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage Schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.



FDFMA2P853 Features


  • -3.0 A, -20V.

  • RDS(ON) = 120 mΩ @ VGS = -4.5 V

  • RDS(ON) = 160 mΩ @ VGS = -2.5 V

  • RDS(ON) = 240 mΩ @ VGS = -1.8 V

  • VF < 0.46 V @ 500 mA

  • Low Profile - 0.8 mm maximun - in the new packageMicroFET 2x2 mm

  • RoHS Compliant



FDFMA2P853 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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