FDFMA2P853

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

3A

Collector Emitter Breakdown Voltage :

2V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Radiation Hardening :

No

Transistor Application :

SWITCHING

Resistance :

120mOhm

Number of Elements :

1

FET Feature :

Schottky Diode (Isolated)

Number of Terminations :

6

Power Dissipation :

1.4W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

40mg

Rise Time :

11ns

Drain Current-Max (Abs) (ID) :

2.2A

Current - Continuous Drain (Id) @ 25°C :

3A Ta

JESD-609 Code :

e4

Case Connection :

DRAIN

Length :

2mm

Mounting Type :

Surface Mount

Vgs (Max) :

±8V

Turn-Off Delay Time :

15 ns

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Rds On (Max) @ Id, Vgs :

120m Ω @ 3A, 4.5V

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

435pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

11 ns

Mount :

Surface Mount

Element Configuration :

Single

Package / Case :

6-VDFN Exposed Pad

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

ECCN Code :

EAR99

Terminal Position :

Dual

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

20V

Power Dissipation-Max :

1.4W Ta

JEDEC-95 Code :

MO-229VCCC

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

FET Type :

P-Channel

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

8V

Width :

2mm

Turn On Delay Time :

9 ns

Height :

750μm