FDFM2N111

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

12V

Voltage - Rated DC :

20V

Drain Current-Max (Abs) (ID) :

4A

FET Type :

N-Channel

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

3.8nC @ 4.5V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Terminal Finish :

Nickel/Palladium (Ni/Pd)

Power Dissipation :

1.7W

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±12V

Turn-Off Delay Time :

11 ns

Continuous Drain Current (ID) :

4A

Radiation Hardening :

No

Number of Terminations :

6

Height :

750μm

Number of Pins :

6

JESD-609 Code :

e4

Factory Lead Time :

16 Weeks

Transistor Application :

SWITCHING

Rise Time :

7ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

7 ns

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

273pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Power Dissipation-Max :

1.7W Ta

Width :

3mm

Mounting Type :

Surface Mount

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

4A

Package / Case :

6-WDFN Exposed Pad

Collector Emitter Breakdown Voltage :

2V

Rds On (Max) @ Id, Vgs :

100m Ω @ 4A, 4.5V

Weight :

165.33333mg

Length :

3mm

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

6 ns

ECCN Code :

EAR99

Transistor Element Material :

SILICON

FET Feature :

Schottky Diode (Isolated)

Number of Elements :

1

Series :

PowerTrench®

Lead Free :

Lead Free