FDFMA2P853T

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Pin Count :

6

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Number of Terminations :

6

Terminal Finish :

NICKEL PALLADIUM GOLD

Terminal Form :

C BEND

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

JESD-609 Code :

e4

Power Dissipation-Max :

1.4W Ta

Rds On (Max) @ Id, Vgs :

120m Ω @ 3A, 4.5V

DS Breakdown Voltage-Min :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Package / Case :

6-UDFN Exposed Pad

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.12Ohm

FET Feature :

Schottky Diode (Isolated)

Series :

PowerTrench®

Vgs (Max) :

±8V

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

435pF @ 10V

Drain to Source Voltage (Vdss) :

20V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

6A

Qualification Status :

COMMERCIAL

JESD-30 Code :

S-PDSO-C6

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260