FDFMA2P853T

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

6

Terminal Form :

C BEND

Pulsed Drain Current-Max (IDM) :

6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

PowerTrench®

Power Dissipation-Max :

1.4W Ta

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3A Ta

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Pin Count :

6

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

JESD-609 Code :

e4

JESD-30 Code :

S-PDSO-C6

Drain to Source Voltage (Vdss) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

20V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Terminal Finish :

NICKEL PALLADIUM GOLD

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

120m Ω @ 3A, 4.5V

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.12Ohm

FET Feature :

Schottky Diode (Isolated)

Input Capacitance (Ciss) (Max) @ Vds :

435pF @ 10V

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±8V

Package / Case :

6-UDFN Exposed Pad

Number of Elements :

1