FDFME2P823ZT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

1.6mm

Height :

550μm

Drain to Source Breakdown Voltage :

-20V

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

2.3A

Power Dissipation :

1.3W

Transistor Application :

SWITCHING

Package / Case :

6-UFDFN Exposed Pad

Rise Time :

4.8ns

Continuous Drain Current (ID) :

2.6A

Fall Time (Typ) :

16 ns

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

142m Ω @ 2.3A, 4.5V

FET Feature :

Schottky Diode (Isolated)

Input Capacitance (Ciss) (Max) @ Vds :

405pF @ 10V

Series :

PowerTrench®

Number of Elements :

1

Feedback Cap-Max (Crss) :

75 pF

Turn-Off Delay Time :

33 ns

Vgs (Max) :

±8V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Mount :

Surface Mount

Radiation Hardening :

No

Threshold Voltage :

-600mV

Number of Pins :

6

Turn On Delay Time :

4.7 ns

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

FET Type :

P-Channel

Element Configuration :

Single

Number of Terminations :

6

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Gate to Source Voltage (Vgs) :

8V

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1V @ 250μA

Additional Feature :

ESD Protection

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Width :

1.6mm

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 4.5V

Nominal Vgs :

-600 mV

Power Dissipation-Max :

1.4W Ta

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

-55°C~150°C TJ