FDC6318P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-12V

Turn On Delay Time :

9 ns

Resistance :

90mOhm

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Pbfree Code :

yes

Number of Channels :

2

Rise Time :

14ns

Nominal Vgs :

700 mV

Input Capacitance (Ciss) (Max) @ Vds :

455pF @ 6V

Length :

3mm

Operating Mode :

ENHANCEMENT MODE

Published :

2001

Transistor Element Material :

SILICON

Dual Supply Voltage :

12V

Termination :

SMD/SMT

Weight :

36mg

REACH SVHC :

No SVHC

Number of Terminations :

6

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

-2.5A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Lead Free :

Lead Free

Threshold Voltage :

-700mV

Element Configuration :

Dual

Number of Pins :

6

Fall Time (Typ) :

14 ns

Series :

PowerTrench®

Number of Elements :

2

Width :

1.7mm

Turn-Off Delay Time :

21 ns

Power - Max :

700mW

Current Rating :

-2.5A

Max Junction Temperature (Tj) :

150°C

Current - Continuous Drain (Id) @ 25°C :

2.5A

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.5A, 4.5V

Power Dissipation :

960mW

Voltage - Rated DC :

-12V

FET Type :

2 P-Channel (Dual)

Height :

1.1mm

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

ECCN Code :

EAR99

Factory Lead Time :

10 Weeks

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

8V

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Power Dissipation :

960mW

Vgs(th) (Max) @ Id :

1.5V @ 250µA