FDC6318P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Dual Supply Voltage :

12V

Gate to Source Voltage (Vgs) :

8V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Current - Continuous Drain (Id) @ 25°C :

2.5A

Max Junction Temperature (Tj) :

150°C

Nominal Vgs :

700 mV

Pbfree Code :

yes

Turn-Off Delay Time :

21 ns

Factory Lead Time :

10 Weeks

Mounting Type :

Surface Mount

Mount :

Surface Mount

Element Configuration :

Dual

Drain to Source Breakdown Voltage :

-12V

Radiation Hardening :

No

Turn On Delay Time :

9 ns

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Continuous Drain Current (ID) :

-2.5A

Current Rating :

-2.5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 P-Channel (Dual)

Number of Terminations :

6

Number of Elements :

2

Voltage - Rated DC :

-12V

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Resistance :

90mOhm

Packaging :

Tape and Reel (TR)

Series :

PowerTrench®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Weight :

36mg

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.5A, 4.5V

Width :

1.7mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Height :

1.1mm

Operating Temperature :

-55°C~150°C TJ

Power - Max :

700mW

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

14 ns

Number of Pins :

6

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Power Dissipation :

960mW

Termination :

SMD/SMT

Threshold Voltage :

-700mV

Number of Channels :

2

FET Feature :

Logic Level Gate

Max Power Dissipation :

960mW

Input Capacitance (Ciss) (Max) @ Vds :

455pF @ 6V

Rise Time :

14ns

Length :

3mm

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Published :

2001

ECCN Code :

EAR99

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant