FDB6690S
- Mfr.Part #
- FDB6690S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 42A TO263AB
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- PowerTrench®, SyncFET™
- Pbfree Code :
- yes
- Reach Compliance Code :
- Unknown
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 0.0155Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 30V
- Drain Current-Max (Abs) (ID) :
- 42A
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 42A Ta
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 48W Tc
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Avalanche Energy Rating (Eas) :
- 140 mJ
- Drain to Source Voltage (Vdss) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.238pF @ 15V
- Rds On (Max) @ Id, Vgs :
- 15.5m Ω @ 21A, 10V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Terminations :
- 2
- Pulsed Drain Current-Max (IDM) :
- 140A
- Terminal Finish :
- NOT SPECIFIED
- Surface Mount :
- yes
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FDB6690S

N-Channel Tape & Reel (TR) 15.5m Ω @ 21A, 10V ±20V 1.238pF @ 15V 15nC @ 5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB6690S Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 140 mJ.A device's maximal input capacitance is 1.238pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 42A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 140A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
FDB6690S Features
the avalanche energy rating (Eas) is 140 mJ
based on its rated peak drain current 140A.
a 30V drain to source voltage (Vdss)
FDB6690S Applications
There are a lot of Rochester Electronics, LLC
FDB6690S applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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