FDB6030BL
- Mfr.Part #
- FDB6030BL
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 40A R-6
- Stock
- 26,677
- In Stock :
- 26,677
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Surface Mount :
- yes
- Number of Elements :
- 1
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Series :
- PowerTrench®
- Power Dissipation-Max :
- 60W Tc
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 20A, 10V
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Qualification Status :
- COMMERCIAL
- Operating Temperature :
- -65°C~175°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- Terminal Finish :
- MATTE TIN
- Drain-source On Resistance-Max :
- 0.018Ohm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 40A
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 5V
- Pulsed Drain Current-Max (IDM) :
- 120A
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.16pF @ 15V
- DS Breakdown Voltage-Min :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- FDB6030BL

N-Channel Tape & Reel (TR) 18m Ω @ 20A, 10V ±20V 1.16pF @ 15V 17nC @ 5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB6030BL Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 150 mJ.A device's maximal input capacitance is 1.16pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 40A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 120A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
FDB6030BL Features
the avalanche energy rating (Eas) is 150 mJ
based on its rated peak drain current 120A.
a 30V drain to source voltage (Vdss)
FDB6030BL Applications
There are a lot of Rochester Electronics, LLC
FDB6030BL applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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