FDB6035L

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

58A

Terminal Form :

Gull wing

Terminal Finish :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

150 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

175A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

30V

Polarity/Channel Type :

N-Channel

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain-source On Resistance-Max :

0.011Ohm

Pbfree Code :

yes

Number of Terminals :

2

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-263AB

Surface Mount :

yes

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

COMMERCIAL