FDB6021P
- Mfr.Part #
- FDB6021P
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 28A TO263AB
- Stock
- 240
- In Stock :
- 240
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -65°C~175°C TJ
- Series :
- PowerTrench®
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Qualification Status :
- COMMERCIAL
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Power Dissipation-Max :
- 37W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±8V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Pulsed Drain Current-Max (IDM) :
- 80A
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 28A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 28A Ta
- Pin Count :
- 4
- FET Type :
- P-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Reach Compliance Code :
- Unknown
- Terminal Finish :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 14A, 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.89pF @ 10V
- Mounting Type :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 4.5V
- Number of Terminations :
- 2
- DS Breakdown Voltage-Min :
- 20V
- Drain-source On Resistance-Max :
- 0.03Ohm
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Voltage (Vdss) :
- 20V
- Surface Mount :
- yes
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FDB6021P

P-Channel Tape & Reel (TR) 30m Ω @ 14A, 4.5V ±8V 1.89pF @ 10V 28nC @ 4.5V 20V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB6021P Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1.89pF @ 10V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 28A.Peak drain current is 80A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 20V.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (1.8V 4.5V), this device contributes to a reduction in overall power consumption.
FDB6021P Features
based on its rated peak drain current 80A.
a 20V drain to source voltage (Vdss)
FDB6021P Applications
There are a lot of Rochester Electronics, LLC
FDB6021P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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