FDB6030L

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

13m Ω @ 26A, 10V

FET Type :

N-Channel

Pbfree Code :

yes

Operating Temperature :

-65°C~175°C TJ

DS Breakdown Voltage-Min :

30V

Pulsed Drain Current-Max (IDM) :

150A

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

52W Tc

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

180 mJ

Drain Current-Max (Abs) (ID) :

52A

Terminal Finish :

MATTE TIN

Vgs (Max) :

±20V

Number of Elements :

1

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.013Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1.25pF @ 15V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Pin Count :

4

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

COMMERCIAL

Series :

PowerTrench®

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

48A Ta

JESD-609 Code :

e3