FDB6030BL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

JESD-609 Code :

e3

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

150 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1.16pF @ 15V

Surface Mount :

yes

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Terminal Form :

Gull wing

Terminal Position :

Single

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-65°C~175°C TJ

Drain to Source Voltage (Vdss) :

30V

Pbfree Code :

yes

DS Breakdown Voltage-Min :

30V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

40A

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Number of Elements :

1

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

120A

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

18m Ω @ 20A, 10V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation-Max :

60W Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.018Ohm