FDB6676

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

6mOhm @ 42A, 10V

Product Status :

Active

Terminal Form :

Gull wing

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

JESD-30 Code :

R-PSSO-G2

Technology :

MOSFET (Metal Oxide)

Reach Compliance Code :

Unknown

Supplier Device Package :

TO-263AB

Qualification Status :

COMMERCIAL

Terminal Finish :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

240 A

Drain-source On Resistance-Max :

0.006 Ω

Series :

PowerTrench®

Avalanche Energy Rating (Eas) :

370 mJ

FET Feature :

-

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Transistor Application :

SWITCHING

Power Dissipation (Max) :

93W (Tc)

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Pin Count :

3

DS Breakdown Voltage-Min :

30 V

Gate Charge (Qg) (Max) @ Vgs :

60 nC @ 5 V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

2

Manufacturer :

Rochester Electronics LLC

Current - Continuous Drain (Id) @ 25°C :

84A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Operating Temperature :

-65°C ~ 175°C (TJ)

Vgs (Max) :

±16V

Number of Elements :

1

FET Type :

N-Channel

Surface Mount :

yes

Vgs(th) (Max) @ Id :

3V @ 250µA

Package :

Bulk

JEDEC-95 Code :

TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

5324 pF @ 15 V

Polarity/Channel Type :

N-Channel