FDB6670AL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

2.44pF @ 15V

Power Dissipation-Max :

68W Tc

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

80A

Number of Terminations :

2

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0065ohm

Series :

PowerTrench®

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 40A, 10V

Pulsed Drain Current-Max (IDM) :

240A

Operating Temperature :

-65°C~175°C TJ

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

30V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3V @ 250µA

Surface Mount :

yes

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

80A Ta

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

114 mJ

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 5V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING