FDB6670AL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3V @ 250µA

Surface Mount :

yes

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

114 mJ

Series :

PowerTrench®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

2.44pF @ 15V

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

30V

Drain Current-Max (Abs) (ID) :

80A

Terminal Position :

Single

Operating Temperature :

-65°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0065ohm

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

240A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

68W Tc

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

LOGIC LEVEL COMPATIBLE

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Pin Count :

4

Number of Elements :

1

Number of Terminations :

2

Transistor Application :

SWITCHING

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

80A Ta

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 40A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE