FDB6670AS
- Mfr.Part #
- FDB6670AS
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 62A TO263AB
- Stock
- 31,628
- In Stock :
- 31,628
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.57pF @ 15V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.0085Ohm
- Qualification Status :
- COMMERCIAL
- Terminal Form :
- Gull wing
- Drain Current-Max (Abs) (ID) :
- 62A
- Number of Terminations :
- 2
- Terminal Finish :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 62A Ta
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation-Max :
- 62.5W Tc
- Pulsed Drain Current-Max (IDM) :
- 150A
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 15V
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 30V
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Series :
- PowerTrench®
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 31A, 10V
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDB6670AS

N-Channel Tape & Reel (TR) 8.5m Ω @ 31A, 10V ±20V 1.57pF @ 15V 39nC @ 15V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB6670AS Overview
The maximum input capacitance of this device is 1.57pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 62A.There is no pulsed drain current maximum for this device based on its rated peak drain current 150A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
FDB6670AS Features
based on its rated peak drain current 150A.
a 30V drain to source voltage (Vdss)
FDB6670AS Applications
There are a lot of Rochester Electronics, LLC
FDB6670AS applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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