FDB6670AL
- Mfr.Part #
- FDB6670AL
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 80A TO263AB
- Stock
- 7,409
- In Stock :
- 7,409
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Series :
- PowerTrench®
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Drain Current-Max (Abs) (ID) :
- 80A
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Terminal Finish :
- MATTE TIN
- Number of Elements :
- 1
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- DS Breakdown Voltage-Min :
- 30V
- Qualification Status :
- COMMERCIAL
- Power Dissipation-Max :
- 68W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain to Source Voltage (Vdss) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -65°C~175°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 40A, 10V
- Avalanche Energy Rating (Eas) :
- 114 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.44pF @ 15V
- Pulsed Drain Current-Max (IDM) :
- 240A
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- 260
- Current - Continuous Drain (Id) @ 25°C :
- 80A Ta
- Drain-source On Resistance-Max :
- 0.0065ohm
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Pin Count :
- 4
- Datasheets
- FDB6670AL

N-Channel Tape & Reel (TR) 6.5m Ω @ 40A, 10V ±20V 2.44pF @ 15V 33nC @ 5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB6670AL Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 114 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2.44pF @ 15V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 80A.Peak drain current is 240A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
FDB6670AL Features
the avalanche energy rating (Eas) is 114 mJ
based on its rated peak drain current 240A.
a 30V drain to source voltage (Vdss)
FDB6670AL Applications
There are a lot of Rochester Electronics, LLC
FDB6670AL applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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