FDB6670AL
- Mfr.Part #
- FDB6670AL
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 80A TO263AB
- Stock
- 7,409
- In Stock :
- 7,409
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- PowerTrench®
- Terminal Finish :
- MATTE TIN
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Avalanche Energy Rating (Eas) :
- 114 mJ
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 80A
- Number of Terminations :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 80A Ta
- JESD-30 Code :
- R-PSSO-G2
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 240A
- Operating Temperature :
- -65°C~175°C TJ
- Pin Count :
- 4
- Terminal Position :
- Single
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 5V
- Surface Mount :
- yes
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.0065ohm
- Drain to Source Voltage (Vdss) :
- 30V
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.44pF @ 15V
- DS Breakdown Voltage-Min :
- 30V
- Power Dissipation-Max :
- 68W Tc
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- JESD-609 Code :
- e3
- Qualification Status :
- COMMERCIAL
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 40A, 10V
- Datasheets
- FDB6670AL
FDB6670AL Documents

N-Channel Tape & Reel (TR) 6.5m Ω @ 40A, 10V ±20V 2.44pF @ 15V 33nC @ 5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB6670AL Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 114 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2.44pF @ 15V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 80A.Peak drain current is 240A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
FDB6670AL Features
the avalanche energy rating (Eas) is 114 mJ
based on its rated peak drain current 240A.
a 30V drain to source voltage (Vdss)
FDB6670AL Applications
There are a lot of Rochester Electronics, LLC
FDB6670AL applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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