FDB6690S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Series :

PowerTrench®, SyncFET™

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

42A Ta

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

140A

Drain to Source Voltage (Vdss) :

30V

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

Terminal Finish :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0155Ohm

FET Type :

N-Channel

Power Dissipation-Max :

48W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

1.238pF @ 15V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

140 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Vgs(th) (Max) @ Id :

3V @ 1mA

Rds On (Max) @ Id, Vgs :

15.5m Ω @ 21A, 10V

Pin Count :

3

Vgs (Max) :

±20V

Case Connection :

DRAIN

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

42A

Pbfree Code :

yes

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)