FDB12N50FTM

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Mfr.Part #
FDB12N50FTM
Manufacturer
Fairchild Semiconductor
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 500V 11.5A D2PAK
Stock
1,022
In Stock :
1,022

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Arrays
Weight :
1.31247g
Factory Lead Time :
6 Weeks
Power Dissipation-Max :
165W Tc
Radiation Hardening :
No
FET Type :
N-Channel
Element Configuration :
Single
Vgs(th) (Max) @ Id :
5V @ 250μA
Mount :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
3
Mounting Type :
Surface Mount
Turn-Off Delay Time :
50 ns
Resistance :
700mOhm
Power Dissipation :
165W
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Lead Free :
Lead Free
Turn On Delay Time :
21 ns
Rise Time :
45ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
30V
Input Capacitance (Ciss) (Max) @ Vds :
1395pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
11.5A Tc
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Continuous Drain Current (ID) :
11.5A
Vgs (Max) :
±30V
Series :
UniFET™
Fall Time (Typ) :
35 ns
Pbfree Code :
yes
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
700m Ω @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain to Source Breakdown Voltage :
500V
Datasheets
FDB12N50FTM
Introducing Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor FDB12N50FTM from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, FDB12N50FTM pinout, FDB12N50FTM datasheet PDF, FDB12N50FTM amp .Beyond Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor FDB12N50FTM ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDB12N50FTM


N-Channel Tape & Reel (TR) 700m Ω @ 6A, 10V ±30V 1395pF @ 25V 30nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB12N50FTM-WS Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1395pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11.5A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [50 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 21 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

FDB12N50FTM-WS Features


a continuous drain current (ID) of 11.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns


FDB12N50FTM-WS Applications


There are a lot of ON Semiconductor
FDB12N50FTM-WS applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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