FDB12N50TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Rds On (Max) @ Id, Vgs :

650m Ω @ 6A, 10V

Pulsed Drain Current-Max (IDM) :

46A

Packaging :

Tape and Reel (TR)

Weight :

1.31247g

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

165W Tc

Height :

4.83mm

Element Configuration :

Single

Lead Free :

Lead Free

Pbfree Code :

yes

Terminal Form :

Gull wing

Number of Terminations :

2

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Turn-Off Delay Time :

45 ns

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Qualification Status :

Not Qualified

Turn On Delay Time :

25 ns

Continuous Drain Current (ID) :

11.5A

Published :

2003

FET Type :

N-Channel

Power Dissipation :

165W

Series :

UniFET™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

60ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

500V

Length :

10.67mm

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

1315pF @ 25V

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Fall Time (Typ) :

35 ns

Factory Lead Time :

9 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

456 mJ

Resistance :

650mOhm

Mounting Type :

Surface Mount

Width :

9.65mm

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Case Connection :

DRAIN

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V