FDB12N50TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Number of Pins :

3

FET Type :

N-Channel

Lead Free :

Lead Free

Width :

9.65mm

Input Capacitance (Ciss) (Max) @ Vds :

1315pF @ 25V

Transistor Application :

SWITCHING

Number of Elements :

1

Length :

10.67mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Mounting Type :

Surface Mount

Fall Time (Typ) :

35 ns

Number of Terminations :

2

Element Configuration :

Single

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Rise Time :

60ns

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Reach Compliance Code :

not_compliant

Turn On Delay Time :

25 ns

Power Dissipation-Max :

165W Tc

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

5V @ 250μA

Published :

2003

Series :

UniFET™

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

650m Ω @ 6A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

45 ns

Continuous Drain Current (ID) :

11.5A

Drain to Source Breakdown Voltage :

500V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Power Dissipation :

165W

Weight :

1.31247g

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

46A

Avalanche Energy Rating (Eas) :

456 mJ

Operating Mode :

ENHANCEMENT MODE

Height :

4.83mm

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

9 Weeks

Resistance :

650mOhm