FDB150N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

FET Type :

N-Channel

Radiation Hardening :

No

Rise Time :

164ns

Continuous Drain Current (ID) :

57A

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Resistance :

15mOhm

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Power Dissipation :

110W

Pbfree Code :

yes

ECCN Code :

EAR99

Factory Lead Time :

8 Weeks

Series :

PowerTrench®

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Turn On Delay Time :

47 ns

Weight :

1.31247g

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

110W Tc

Fall Time (Typ) :

83 ns

Number of Terminations :

2

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

100V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Mount :

Surface Mount

Turn-Off Delay Time :

86 ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Pulsed Drain Current-Max (IDM) :

228A

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

15m Ω @ 49A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

4760pF @ 25V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Case Connection :

DRAIN

Element Configuration :

Single

Vgs (Max) :

±20V