FDB10AN06A0
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- Mfr.Part #
- FDB10AN06A0
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 12A/75A TO263AB
- Stock
- 47,615
- In Stock ：
- 47,615
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation-Max :
- 135W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1840pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Supplier Device Package :
- TO-263AB
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Rds On (Max) @ Id, Vgs :
- 10.5mOhm @ 75A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta 75A Tc
- Published :
- 2002
- Series :
- PowerTrench®
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FDB10AN06A0
N-Channel Tape & Reel (TR) 10.5mOhm @ 75A, 10V ±20V 1840pF @ 25V 37nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB10AN06A0 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1840pF @ 25V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (6V 10V), this device helps reduce its overall power consumption.
FDB10AN06A0 Features
a 60V drain to source voltage (Vdss)
FDB10AN06A0 Applications
There are a lot of ON Semiconductor
FDB10AN06A0 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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