FDB12N50FTM-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Weight :

1.31247g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

165W Tc

Factory Lead Time :

6 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

35 ns

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1395pF @ 25V

Turn-Off Delay Time :

50 ns

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Turn On Delay Time :

21 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

700m Ω @ 6A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rise Time :

45ns

Radiation Hardening :

No

Resistance :

700mOhm

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Mount :

Surface Mount

Series :

UniFET™

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

500V

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

11.5A

Mounting Type :

Surface Mount

Power Dissipation :

165W

FET Type :

N-Channel