FDB120N10
- Mfr.Part #
- FDB120N10
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 74A D2PAK
- Stock
- 1,944
- In Stock :
- 1,944
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 105ns
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 39 ns
- Drain to Source Breakdown Voltage :
- 100V
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 15 ns
- Current - Continuous Drain (Id) @ 25°C :
- 74A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Width :
- 9.65mm
- Height :
- 4.83mm
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 74A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 170W Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 74A
- Length :
- 10.67mm
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- PowerTrench®
- Pulsed Drain Current-Max (IDM) :
- 296A
- Pbfree Code :
- yes
- Power Dissipation :
- 170W
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Factory Lead Time :
- 8 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2009
- Weight :
- 1.31247g
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 5605pF @ 25V
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 27 ns
- Case Connection :
- DRAIN
- Reach Compliance Code :
- not_compliant
- Transistor Element Material :
- SILICON
- Datasheets
- FDB120N10

N-Channel Tape & Reel (TR) 12m Ω @ 74A, 10V ±20V 5605pF @ 25V 86nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB120N10 Overview
The maximum input capacitance of this device is 5605pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 74A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 39 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 296A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 27 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
FDB120N10 Features
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 39 ns
based on its rated peak drain current 296A.
FDB120N10 Applications
There are a lot of ON Semiconductor
FDB120N10 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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