FDB110N15A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.83mm

Turn-Off Delay Time :

46 ns

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Published :

2011

Drain to Source Breakdown Voltage :

150V

Number of Pins :

3

ECCN Code :

EAR99

Weight :

1.31247g

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Series :

PowerTrench®

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Transistor Element Material :

SILICON

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Length :

10.67mm

JESD-609 Code :

e3

Case Connection :

DRAIN

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Width :

9.65mm

Radiation Hardening :

No

Continuous Drain Current (ID) :

92A

Number of Terminations :

2

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

14 ns

Input Capacitance (Ciss) (Max) @ Vds :

4510pF @ 75V

Turn On Delay Time :

25 ns

Current - Continuous Drain (Id) @ 25°C :

92A Tc

Power Dissipation-Max :

234W Tc

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Power Dissipation :

234W

Rise Time :

26ns

Rds On (Max) @ Id, Vgs :

11m Ω @ 92A, 10V