FDB110N15A
- Mfr.Part #
- FDB110N15A
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 92A D2PAK
- Stock
- 12,672
- In Stock :
- 12,672
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 4.83mm
- Turn-Off Delay Time :
- 46 ns
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2011
- Drain to Source Breakdown Voltage :
- 150V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Weight :
- 1.31247g
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Series :
- PowerTrench®
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Length :
- 10.67mm
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Width :
- 9.65mm
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 92A
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 14 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4510pF @ 75V
- Turn On Delay Time :
- 25 ns
- Current - Continuous Drain (Id) @ 25°C :
- 92A Tc
- Power Dissipation-Max :
- 234W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 61nC @ 10V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 8 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 234W
- Rise Time :
- 26ns
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 92A, 10V
- Datasheets
- FDB110N15A
FDB110N15A Documents

N-Channel Tape & Reel (TR) 11m Ω @ 92A, 10V ±20V 4510pF @ 75V 61nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
The N-Channel MOSFET FDB110N15A is produced using an advanced PowerTrench? process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. It can be applied in Servers & Workstations, Desktop PC, Uninterruptible Power Supply, Electric Bike, and other Data Processing.
FDB110N15A Features
RDS(on) = 9.25m? ( Typ.)@ VGS = 10V, ID = 92A
Fast Switching Speed
Low Gate Charge, QG = 47nC ( Typ.)
High Performance Trench Technology for Extremely Low RDS(on)
High Power and Current Handling Capability
RoHS Compliant
FDB110N15A Applications
AC-DC Merchant Power Supply
AC-DC Merchant Power Supply - Servers & Workstations
AC-DC Merchant Power Supply - Desktop PC
Uninterruptible Power Supply
Other Data Processing
Electric Bike
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