FDB110N15A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.83mm

Published :

2011

Vgs (Max) :

±20V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

4510pF @ 75V

Element Configuration :

Single

Pbfree Code :

yes

Number of Pins :

3

Fall Time (Typ) :

14 ns

Power Dissipation :

234W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

150V

Power Dissipation-Max :

234W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Transistor Element Material :

SILICON

Series :

PowerTrench®

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Width :

9.65mm

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

92A

Factory Lead Time :

8 Weeks

Mount :

Surface Mount

Weight :

1.31247g

Mounting Type :

Surface Mount

Turn On Delay Time :

25 ns

FET Type :

N-Channel

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

11m Ω @ 92A, 10V

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

20V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Length :

10.67mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

46 ns

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

92A Tc

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

26ns

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE