FDB14N30TM
- Mfr.Part #
- FDB14N30TM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 14A D2PAK
- Stock
- 8
- In Stock :
- 8
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Power Dissipation :
- 140W
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 30 ns
- Number of Pins :
- 2
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Rise Time :
- 105ns
- JESD-609 Code :
- e3
- Weight :
- 1.31247g
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 7A, 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs (Max) :
- ±30V
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Series :
- UniFET™
- Nominal Vgs :
- 5 V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Contact Plating :
- Tin
- Width :
- 11.33mm
- Factory Lead Time :
- 4 Weeks
- Resistance :
- 290mOhm
- Length :
- 10.67mm
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 330 mJ
- Height :
- 4.83mm
- Threshold Voltage :
- 5V
- Dual Supply Voltage :
- 300V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1060pF @ 25V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation-Max :
- 140W Tc
- Element Configuration :
- Single
- Turn On Delay Time :
- 20 ns
- Fall Time (Typ) :
- 75 ns
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Termination :
- SMD/SMT
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Continuous Drain Current (ID) :
- 14A
- Pulsed Drain Current-Max (IDM) :
- 56A
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 300V
- Pbfree Code :
- yes
- Datasheets
- FDB14N30TM
FDB14N30TM Documents

N-Channel Tape & Reel (TR) 290m Ω @ 7A, 10V ±30V 1060pF @ 25V 25nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB14N30TM Description
The FDB14N30 is an N-Channel UniFETTM MOSFET that operates at 300V, 14A, and 290m* The UniFETTM MOSFET is part of Fairchild Semiconductor's high voltage MOSFET family using a planar stripe and DMOS technology platform. The MOSFET has been designed to reduce on-state resistance and to provide better switching performance and avalanche energy strength. In addition to power factor correction (PFC), flat panel displays (FPD), television power, and electronic lamp ballasts, this FDB14N30TM is also suitable for switching power converter applications.
FDB14N30TM Features
-
100% avalanche tested
-
RoHS compliant
-
RDS(on) = 290mΩ ( Max.)@ VGS = 10V, ID = 7A
-
Low gate charge ( Typ. 18nC)
-
Low Crss ( Typ. 17pF)
FDB14N30TM Applications
-
Lighting
-
Uninterruptible Power Supply
-
AC-DC Power Supply
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