FDB14N30TM
- Mfr.Part #
- FDB14N30TM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 14A D2PAK
- Stock
- 8
- In Stock :
- 8
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Delay Time :
- 20 ns
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 14A
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 7A, 10V
- Rise Time :
- 105ns
- Fall Time (Typ) :
- 75 ns
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Power Dissipation :
- 140W
- Series :
- UniFET™
- Avalanche Energy Rating (Eas) :
- 330 mJ
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 1060pF @ 25V
- Contact Plating :
- Tin
- Height :
- 4.83mm
- Terminal Form :
- Gull wing
- Pulsed Drain Current-Max (IDM) :
- 56A
- Termination :
- SMD/SMT
- Transistor Element Material :
- SILICON
- Resistance :
- 290mOhm
- Number of Pins :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Breakdown Voltage :
- 300V
- Factory Lead Time :
- 4 Weeks
- Nominal Vgs :
- 5 V
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Width :
- 11.33mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 30 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Weight :
- 1.31247g
- RoHS Status :
- ROHS3 Compliant
- Dual Supply Voltage :
- 300V
- Threshold Voltage :
- 5V
- Length :
- 10.67mm
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Power Dissipation-Max :
- 140W Tc
- Datasheets
- FDB14N30TM
FDB14N30TM Documents

N-Channel Tape & Reel (TR) 290m Ω @ 7A, 10V ±30V 1060pF @ 25V 25nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB14N30TM Description
The FDB14N30 is an N-Channel UniFETTM MOSFET that operates at 300V, 14A, and 290m* The UniFETTM MOSFET is part of Fairchild Semiconductor's high voltage MOSFET family using a planar stripe and DMOS technology platform. The MOSFET has been designed to reduce on-state resistance and to provide better switching performance and avalanche energy strength. In addition to power factor correction (PFC), flat panel displays (FPD), television power, and electronic lamp ballasts, this FDB14N30TM is also suitable for switching power converter applications.
FDB14N30TM Features
-
100% avalanche tested
-
RoHS compliant
-
RDS(on) = 290mΩ ( Max.)@ VGS = 10V, ID = 7A
-
Low gate charge ( Typ. 18nC)
-
Low Crss ( Typ. 17pF)
FDB14N30TM Applications
-
Lighting
-
Uninterruptible Power Supply
-
AC-DC Power Supply
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