FDB14N30TM
- Mfr.Part #
- FDB14N30TM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 14A D2PAK
- Stock
- 8
- In Stock :
- 8
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 1.31247g
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- Gull wing
- Dual Supply Voltage :
- 300V
- Turn-Off Delay Time :
- 30 ns
- Width :
- 11.33mm
- Pbfree Code :
- yes
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Number of Pins :
- 2
- Height :
- 4.83mm
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Turn On Delay Time :
- 20 ns
- Power Dissipation :
- 140W
- Pulsed Drain Current-Max (IDM) :
- 56A
- Series :
- UniFET™
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Resistance :
- 290mOhm
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 105ns
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Termination :
- SMD/SMT
- Length :
- 10.67mm
- Continuous Drain Current (ID) :
- 14A
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 75 ns
- Gate to Source Voltage (Vgs) :
- 30V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Threshold Voltage :
- 5V
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Contact Plating :
- Tin
- Nominal Vgs :
- 5 V
- Avalanche Energy Rating (Eas) :
- 330 mJ
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 300V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1060pF @ 25V
- Power Dissipation-Max :
- 140W Tc
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Datasheets
- FDB14N30TM
FDB14N30TM Documents

N-Channel Tape & Reel (TR) 290m Ω @ 7A, 10V ±30V 1060pF @ 25V 25nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB14N30TM Description
The FDB14N30 is an N-Channel UniFETTM MOSFET that operates at 300V, 14A, and 290m* The UniFETTM MOSFET is part of Fairchild Semiconductor's high voltage MOSFET family using a planar stripe and DMOS technology platform. The MOSFET has been designed to reduce on-state resistance and to provide better switching performance and avalanche energy strength. In addition to power factor correction (PFC), flat panel displays (FPD), television power, and electronic lamp ballasts, this FDB14N30TM is also suitable for switching power converter applications.
FDB14N30TM Features
-
100% avalanche tested
-
RoHS compliant
-
RDS(on) = 290mΩ ( Max.)@ VGS = 10V, ID = 7A
-
Low gate charge ( Typ. 18nC)
-
Low Crss ( Typ. 17pF)
FDB14N30TM Applications
-
Lighting
-
Uninterruptible Power Supply
-
AC-DC Power Supply
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