FDB13AN06A0

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Mfr.Part #
FDB13AN06A0
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 60V 10.9A/62A D2PAK
Stock
59
In Stock :
59

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Termination :
SMD/SMT
Rds On (Max) @ Id, Vgs :
13.5m Ω @ 62A, 10V
Width :
11.33mm
Gate to Source Voltage (Vgs) :
20V
Current - Continuous Drain (Id) @ 25°C :
10.9A Ta 62A Tc
Factory Lead Time :
8 Weeks
Packaging :
Tape and Reel (TR)
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Voltage - Rated DC :
60V
JESD-30 Code :
R-PSSO-G2
Series :
PowerTrench®
Avalanche Energy Rating (Eas) :
56 mJ
Turn On Delay Time :
9 ns
Pbfree Code :
yes
Published :
2003
Length :
10.67mm
Nominal Vgs :
4 V
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Operating Temperature :
-55°C~175°C TJ
Power Dissipation :
115W
Continuous Drain Current (ID) :
62A
Turn-Off Delay Time :
24 ns
Rise Time :
96ns
REACH SVHC :
No SVHC
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
Reach Compliance Code :
not_compliant
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Element Configuration :
Single
Number of Elements :
1
Number of Pins :
3
Height :
4.83mm
Mounting Type :
Surface Mount
Resistance :
13.5mOhm
Qualification Status :
Not Qualified
Lead Free :
Lead Free
Weight :
1.31247g
Fall Time (Typ) :
26 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current Rating :
62A
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material :
SILICON
Contact Plating :
Tin
Power Dissipation-Max :
115W Tc
Case Connection :
DRAIN
Terminal Form :
Gull wing
Threshold Voltage :
4V
RoHS Status :
ROHS3 Compliant
Number of Terminations :
2
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 25V
Mount :
Surface Mount
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain to Source Breakdown Voltage :
60V
Dual Supply Voltage :
60V
JESD-609 Code :
e3
Introducing Transistors - FETs, MOSFETs - Single onsemi FDB13AN06A0 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, FDB13AN06A0 pinout, FDB13AN06A0 datasheet PDF, FDB13AN06A0 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDB13AN06A0 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDB13AN06A0


N-Channel Tape & Reel (TR) 13.5m Ω @ 62A, 10V ±20V 1350pF @ 25V 29nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB13AN06A0 Description

FDB13AN06A0 is a PowerTrench? N-Channel MOSFET. The latest shielded gate PowerTrench? MOSFET, the FDB13AN06A0, can significantly enhance the efficiency of synchronous rectification by combining a reduced QSYNC and gentle reverse-recovery intrinsic body diode performance with fast switching.


FDB13AN06A0 Features

  • RDS(ON) = 11.5mΩ (Typ.) @ VGS = 10V, ID = 62A

  • QG(tot) = 22nC (Typ.) @ VGS = 10V

  • Low Miller Charge

  • Low QRR Body Diode

  • UIS Capability (Single Pulse and Repetitive Pulse)

  • Qualified to AEC Q101Formerly developmental type 82555


FDB13AN06A0 Applications

  • Workstation

  • Server & Mainframe

  • AC-DC Merchant Power Supply - Servers & Workstations


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