FDB13AN06A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

62A

Pbfree Code :

yes

Number of Terminations :

2

Power Dissipation :

115W

Contact Plating :

Tin

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Nominal Vgs :

4 V

Mount :

Surface Mount

Dual Supply Voltage :

60V

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Factory Lead Time :

8 Weeks

Length :

10.67mm

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Vgs (Max) :

±20V

Current Rating :

62A

Case Connection :

DRAIN

Threshold Voltage :

4V

Power Dissipation-Max :

115W Tc

Height :

4.83mm

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 62A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Current - Continuous Drain (Id) @ 25°C :

10.9A Ta 62A Tc

Transistor Application :

SWITCHING

Number of Elements :

1

Series :

PowerTrench®

Fall Time (Typ) :

26 ns

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Rise Time :

96ns

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

56 mJ

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Resistance :

13.5mOhm

Termination :

SMD/SMT

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

9 ns

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

24 ns

Published :

2003

Weight :

1.31247g

JESD-609 Code :

e3

Voltage - Rated DC :

60V

Width :

11.33mm

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)