FDB13AN06A0
- Mfr.Part #
- FDB13AN06A0
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 10.9A/62A D2PAK
- Stock
- 59
- In Stock :
- 59
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 24 ns
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Width :
- 11.33mm
- Turn On Delay Time :
- 9 ns
- Threshold Voltage :
- 4V
- Rise Time :
- 96ns
- Dual Supply Voltage :
- 60V
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 62A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350pF @ 25V
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Element Configuration :
- Single
- Weight :
- 1.31247g
- Nominal Vgs :
- 4 V
- Power Dissipation :
- 115W
- Fall Time (Typ) :
- 26 ns
- Power Dissipation-Max :
- 115W Tc
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Series :
- PowerTrench®
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 10.9A Ta 62A Tc
- Current Rating :
- 62A
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Termination :
- SMD/SMT
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- 60V
- Avalanche Energy Rating (Eas) :
- 56 mJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Length :
- 10.67mm
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Resistance :
- 13.5mOhm
- Reach Compliance Code :
- not_compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Height :
- 4.83mm
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Published :
- 2003
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Rds On (Max) @ Id, Vgs :
- 13.5m Ω @ 62A, 10V
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDB13AN06A0
FDB13AN06A0 Documents

N-Channel Tape & Reel (TR) 13.5m Ω @ 62A, 10V ±20V 1350pF @ 25V 29nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB13AN06A0 Description
FDB13AN06A0 is a PowerTrench? N-Channel MOSFET. The latest shielded gate PowerTrench? MOSFET, the FDB13AN06A0, can significantly enhance the efficiency of synchronous rectification by combining a reduced QSYNC and gentle reverse-recovery intrinsic body diode performance with fast switching.
FDB13AN06A0 Features
-
RDS(ON) = 11.5mΩ (Typ.) @ VGS = 10V, ID = 62A
-
QG(tot) = 22nC (Typ.) @ VGS = 10V
-
Low Miller Charge
-
Low QRR Body Diode
-
UIS Capability (Single Pulse and Repetitive Pulse)
-
Qualified to AEC Q101Formerly developmental type 82555
FDB13AN06A0 Applications
-
Workstation
-
Server & Mainframe
-
AC-DC Merchant Power Supply - Servers & Workstations
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