DMN2990UFZ-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e4

Drain to Source Breakdown Voltage :

20V

Mount :

Surface Mount

Fall Time (Typ) :

7.7 ns

Gate Charge (Qg) (Max) @ Vgs :

0.5nC @ 4.5V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

320mW Ta

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

250mA

Additional Feature :

High Reliability

Current - Continuous Drain (Id) @ 25°C :

250mA Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

3-XFDFN

Rise Time :

2.1ns

ECCN Code :

EAR99

Turn-Off Delay Time :

22 ns

Published :

2015

Number of Channels :

2

Number of Pins :

3

Case Connection :

DRAIN

Terminal Position :

BOTTOM

Input Capacitance (Ciss) (Max) @ Vds :

55.2pF @ 16V

Vgs (Max) :

±8V

Rds On (Max) @ Id, Vgs :

990m Ω @ 100mA, 4.5V

Turn On Delay Time :

3.5 ns

FET Type :

N-Channel

Transistor Element Material :

SILICON

Terminal Form :

NO LEAD

Capacitance :

389pF

Base Part Number :

DMN2990

Operating Mode :

ENHANCEMENT MODE

Reference Standard :

AEC-Q101

Gate to Source Voltage (Vgs) :

8V

Drain-source On Resistance-Max :

0.99Ohm

Factory Lead Time :

15 Weeks

Feedback Cap-Max (Crss) :

5.6 pF

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V