DMN26D0UFB4-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Factory Lead Time :

18 Weeks

Pbfree Code :

yes

Turn-Off Delay Time :

13.4 ns

Turn On Delay Time :

3.8 ns

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

14.1pF @ 15V

Height :

350μm

Drain Current-Max (Abs) (ID) :

0.24A

Peak Reflow Temperature (Cel) :

260

Rise Time :

7.9ns

RoHS Status :

ROHS3 Compliant

Length :

1.05mm

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

10V

Number of Terminations :

3

Continuous Drain Current (ID) :

240mA

Case Connection :

DRAIN

Published :

2017

Power Dissipation :

350mW

ECCN Code :

EAR99

Element Configuration :

Single

Terminal Position :

BOTTOM

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

FET Type :

N-Channel

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±10V

Fall Time (Typ) :

15.2 ns

Package / Case :

3-XFDFN

Width :

650μm

Resistance :

10Ohm

Drain to Source Voltage (Vdss) :

20V

Power Dissipation-Max :

350mW Ta

Rds On (Max) @ Id, Vgs :

3 Ω @ 100mA, 4.5V

DS Breakdown Voltage-Min :

20V

Number of Elements :

1

Transistor Element Material :

SILICON

JESD-609 Code :

e4

Number of Channels :

1

Packaging :

Digi-Reel®

Transistor Application :

SWITCHING