DMN2027LK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.021Ohm

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

20V

Pbfree Code :

yes

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

9.1nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2.14W Ta

Published :

2013

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±12V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Rds On (Max) @ Id, Vgs :

21m Ω @ 20A, 10V

Pulsed Drain Current-Max (IDM) :

46.8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

20V

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Single

Pin Count :

4

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

11.6A Ta

Drain Current-Max (Abs) (ID) :

11.6A

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

857pF @ 10V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Number of Elements :

1