DMN2011UFDE-7
- Mfr.Part #
- DMN2011UFDE-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 6-UDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 11.7A 6UDFN
- Stock
- 173
- In Stock :
- 173
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 3.6 ns
- Continuous Drain Current (ID) :
- 11.7A
- ECCN Code :
- EAR99
- Package / Case :
- 6-UDFN Exposed Pad
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Rise Time :
- 2.6ns
- Current - Continuous Drain (Id) @ 25°C :
- 11.7A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 2248pF @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1
- Factory Lead Time :
- 23 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Fall Time (Typ) :
- 13.5 ns
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 12V
- Drain to Source Voltage (Vdss) :
- 20V
- Base Part Number :
- DMN2011
- Published :
- 2014
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Vgs (Max) :
- ±12V
- Rds On (Max) @ Id, Vgs :
- 9.5m Ω @ 7A, 4.5V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- JESD-609 Code :
- e4
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 21.6 ns
- Power Dissipation-Max :
- 610mW Ta
- FET Type :
- N-Channel
- Datasheets
- DMN2011UFDE-7

N-Channel Tape & Reel (TR) 9.5m Ω @ 7A, 4.5V ±12V 2248pF @ 10V 56nC @ 10V 20V 6-UDFN Exposed Pad
DMN2011UFDE-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2248pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 21.6 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3.6 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.5V 4.5V).
DMN2011UFDE-7 Features
a continuous drain current (ID) of 11.7A
the turn-off delay time is 21.6 ns
a 20V drain to source voltage (Vdss)
DMN2011UFDE-7 Applications
There are a lot of Diodes Incorporated
DMN2011UFDE-7 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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