DMN2005UPS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

20V

Published :

2015

Input Capacitance (Ciss) (Max) @ Vds :

5337pF @ 10V

Reference Standard :

AEC-Q101

Factory Lead Time :

17 Weeks

Drain Current-Max (Abs) (ID) :

20A

JESD-30 Code :

R-PDSO-F5

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V

Additional Feature :

High Reliability

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

150A

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

20A Ta 100A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

100A

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 13.5A, 4.5V

Avalanche Energy Rating (Eas) :

133 mJ

Number of Elements :

1

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Package / Case :

8-PowerTDFN

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Power Dissipation-Max :

1.5W Ta

Gate Charge (Qg) (Max) @ Vgs :

142nC @ 10V

Terminal Form :

Flat

JESD-609 Code :

e3

Mount :

Surface Mount

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±12V