CSD88539NDT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Length :

4.9mm

Number of Elements :

2

Thickness :

1.58mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

Logic Level Gate

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

9ns

Number of Pins :

8

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Weight :

540.001716mg

Width :

3.91mm

DS Breakdown Voltage-Min :

60V

Pulsed Drain Current-Max (IDM) :

46A

Height :

1.75mm

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

6.3A

JESD-609 Code :

e4

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

14 ns

Number of Channels :

2

Turn On Delay Time :

5 ns

Drain to Source Voltage (Vdss) :

60V

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.034Ohm

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Contact Plating :

Gold

Continuous Drain Current (ID) :

15A

Rds On (Max) @ Id, Vgs :

28m Ω @ 5A, 10V

Series :

NexFET™

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3.6V @ 250µA

Element Configuration :

Dual

Fall Time (Typ) :

4 ns

Threshold Voltage :

3V

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

741pF @ 30V

Max Power Dissipation :

2.1W

Peak Reflow Temperature (Cel) :

260

Base Part Number :

CSD88539

Factory Lead Time :

6 Weeks

Number of Terminations :

8

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Package / Case :

8-SOIC (0.154, 3.90mm Width)