CSD88539ND

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

28m Ω @ 5A, 10V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Series :

NexFET™

Number of Elements :

2

Element Configuration :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

60V

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

3.6V @ 250µA

Pbfree Code :

yes

JESD-609 Code :

e4

Weight :

540.001716mg

FET Feature :

Standard

Height :

1.75mm

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

3V

Width :

3.91mm

Length :

4.9mm

Terminal Form :

Gull wing

Rise Time :

9ns

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Gold

Drain to Source Voltage (Vdss) :

60V

Number of Pins :

8

Continuous Drain Current (ID) :

15A

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

4 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Factory Lead Time :

6 Weeks

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

46A

Thickness :

1.58mm

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Turn On Delay Time :

6 ns

Base Part Number :

CSD88539

Input Capacitance (Ciss) (Max) @ Vds :

741pF @ 30V

Packaging :

Tape and Reel (TR)

Power Dissipation :

2.1W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.034Ohm

Drain Current-Max (Abs) (ID) :

6.3A

Turn-Off Delay Time :

5 ns

Radiation Hardening :

No

Max Power Dissipation :

2.1W