CSD88537ND

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

6 Weeks

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

60V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Terminal Form :

Gull wing

Element Configuration :

Dual

Max Power Dissipation :

2.1W

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Width :

3.91mm

Operating Mode :

ENHANCEMENT MODE

Length :

4.9mm

Additional Feature :

AVALANCHE RATED

Turn On Delay Time :

6 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

15A

Number of Elements :

2

Contact Plating :

Gold

Series :

NexFET™

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

60V

Threshold Voltage :

3V

Transistor Element Material :

SILICON

Pbfree Code :

yes

Turn-Off Delay Time :

9 ns

FET Feature :

Standard

REACH SVHC :

No SVHC

JESD-609 Code :

e4

Thickness :

1.58mm

Number of Pins :

8

Vgs(th) (Max) @ Id :

3.6V @ 250µA

Weight :

540.001716mg

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.019Ohm

Fall Time (Typ) :

19 ns

Height :

1.75mm

Drain Current-Max (Abs) (ID) :

8A

Rds On (Max) @ Id, Vgs :

15m Ω @ 8A, 10V

Base Part Number :

CSD88537

Rise Time :

15ns

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 30V

Power Dissipation :

2.1W

Number of Terminations :

8

FET Type :

2 N-Channel (Dual)