CSD87502Q2T

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pbfree Code :

yes

FET Type :

2 N-Channel (Dual)

Thickness :

750μm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

23A

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6

Drain to Source Voltage (Vdss) :

30V

Feedback Cap-Max (Crss) :

29 pF

Element Configuration :

Dual

Series :

NexFET™

Max Power Dissipation :

2.3W

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

5A

Base Part Number :

CSD87502

Number of Elements :

2

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 250μA

DS Breakdown Voltage-Min :

30V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

1.6V

FET Feature :

Logic Level Gate, 5V Drive

Input Capacitance (Ciss) (Max) @ Vds :

353pF @ 15V

Width :

2mm

Rds On (Max) @ Id, Vgs :

32.4m Ω @ 4A, 10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

NO LEAD

Number of Pins :

6

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Package / Case :

6-WDFN Exposed Pad

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Length :

2mm

Drain Current-Max (Abs) (ID) :

5A

Packaging :

Cut Tape (CT)

Avalanche Energy Rating (Eas) :

3.1 mJ

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC