CSD87313DMST

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Width :

3.3mm

Number of Terminations :

6

Length :

3.3mm

Series :

NexFET™

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Factory Lead Time :

6 Weeks

FET Type :

2 N-Channel (Dual) Common Drain

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

4290pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Package / Case :

8-PowerWDFN

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Application :

SWITCHING

Number of Pins :

8

Terminal Form :

NO LEAD

Case Connection :

SOURCE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Drain to Source Resistance :

5.5mOhm

Power - Max :

2.7W

Avalanche Energy Rating (Eas) :

67 mJ

FET Feature :

Standard

RoHS Status :

ROHS3 Compliant

Feedback Cap-Max (Crss) :

200 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

CSD87313

Thickness :

750μm

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes