BSS64LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

NPN

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Collector Cutoff (Max) :

100nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

60MHz

Transistor Element Material :

SILICON

Voltage - Rated DC :

80V

Height :

1.01mm

Max Breakdown Voltage :

80V

Emitter Base Voltage (VEBO) :

5V

Contact Plating :

Tin

REACH SVHC :

No SVHC

Length :

3.04mm

Pin Count :

3

hFE Min :

20

Power Dissipation :

300mW

Operating Temperature :

-55°C~150°C TJ

Width :

1.4mm

Max Collector Current :

100mA

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

80V

Element Configuration :

Single

Factory Lead Time :

2 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Base Part Number :

BSS64

Collector Base Voltage (VCBO) :

120V

Transition Frequency :

60MHz

Collector Emitter Saturation Voltage :

200mV

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 10mA 1V

Transistor Type :

NPN

Current Rating :

100mA

Vce Saturation (Max) @ Ib, Ic :

200mV @ 15mA, 50mA

Frequency :

60MHz

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Published :

2006

Surface Mount :

yes

Terminal Position :

Dual

Transistor Application :

AMPLIFIER

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

225mW

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Terminal Form :

Gull wing

Number of Terminations :

3

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

80V

Number of Pins :

3