BSS64LT1

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Mfr.Part #
BSS64LT1
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 80V 0.1A SOT23-3
Stock
2,377
In Stock :
2,377

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminations :
3
Polarity/Channel Type :
NPN
Mounting Type :
Surface Mount
Emitter Base Voltage (VEBO) :
5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
300mW
Length :
3.04mm
Gain Bandwidth Product :
60MHz
Terminal Form :
Gull wing
Transistor Application :
AMPLIFIER
Width :
1.4mm
Frequency :
60MHz
Max Power Dissipation :
225mW
Packaging :
Tape and Reel (TR)
Pbfree Code :
yes
Max Breakdown Voltage :
80V
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Transistor Type :
NPN
Max Collector Current :
100mA
Voltage - Rated DC :
80V
RoHS Status :
ROHS3 Compliant
Current Rating :
100mA
Transistor Element Material :
SILICON
Package / Case :
TO-236-3, SC-59, SOT-23-3
ECCN Code :
EAR99
Terminal Position :
Dual
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
200mV @ 15mA, 50mA
Peak Reflow Temperature (Cel) :
260
Collector Emitter Breakdown Voltage :
80V
JESD-609 Code :
e3
Factory Lead Time :
2 Weeks
Current - Collector Cutoff (Max) :
100nA ICBO
Published :
2006
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
40
REACH SVHC :
No SVHC
Pin Count :
3
Transition Frequency :
60MHz
Height :
1.01mm
Radiation Hardening :
No
Contact Plating :
Tin
hFE Min :
20
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 10mA 1V
Base Part Number :
BSS64
Surface Mount :
yes
Number of Elements :
1
Collector Base Voltage (VCBO) :
120V
Element Configuration :
Single
Collector Emitter Saturation Voltage :
200mV
Collector Emitter Voltage (VCEO) :
80V
Datasheets
BSS64LT1
Introducing Transistors - Bipolar (BJT) - Single onsemi BSS64LT1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Base Part Number:BSS64, BSS64LT1 pinout, BSS64LT1 datasheet PDF, BSS64LT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BSS64LT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BSS64LT1


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BSS64LT1G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 10mA 1V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 200mV @ 15mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 60MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.

BSS64LT1G Features


the DC current gain for this device is 20 @ 10mA 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 15mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 60MHz


BSS64LT1G Applications


There are a lot of ON Semiconductor
BSS64LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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