BSS64LT1
- Mfr.Part #
- BSS64LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.1A SOT23-3
- Stock
- 2,377
- In Stock :
- 2,377
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 300mW
- Length :
- 3.04mm
- Gain Bandwidth Product :
- 60MHz
- Terminal Form :
- Gull wing
- Transistor Application :
- AMPLIFIER
- Width :
- 1.4mm
- Frequency :
- 60MHz
- Max Power Dissipation :
- 225mW
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transistor Type :
- NPN
- Max Collector Current :
- 100mA
- Voltage - Rated DC :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 100mA
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 15mA, 50mA
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 80V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 2 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2006
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Transition Frequency :
- 60MHz
- Height :
- 1.01mm
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- hFE Min :
- 20
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 10mA 1V
- Base Part Number :
- BSS64
- Surface Mount :
- yes
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 120V
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 200mV
- Collector Emitter Voltage (VCEO) :
- 80V
- Datasheets
- BSS64LT1

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSS64LT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 10mA 1V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 200mV @ 15mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 60MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BSS64LT1G Features
the DC current gain for this device is 20 @ 10mA 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 15mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 60MHz
BSS64LT1G Applications
There are a lot of ON Semiconductor
BSS64LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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