BSS64LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

5V

Height :

1.01mm

Transition Frequency :

60MHz

Collector Base Voltage (VCBO) :

120V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

3

Published :

2006

Polarity/Channel Type :

NPN

Terminal Position :

Dual

Element Configuration :

Single

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

100nA ICBO

Lead Free :

Lead Free

Factory Lead Time :

2 Weeks

Frequency :

60MHz

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

80V

Width :

1.4mm

Operating Temperature :

-55°C~150°C TJ

hFE Min :

20

Transistor Type :

NPN

Radiation Hardening :

No

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

80V

Collector Emitter Saturation Voltage :

200mV

Voltage - Rated DC :

80V

Pbfree Code :

yes

Terminal Form :

Gull wing

Current Rating :

100mA

Gain Bandwidth Product :

60MHz

Max Power Dissipation :

225mW

Pin Count :

3

Power Dissipation :

300mW

Length :

3.04mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Base Part Number :

BSS64

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Max Breakdown Voltage :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

200mV @ 15mA, 50mA

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 10mA 1V