BSP52T3G

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Mfr.Part #
BSP52T3G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN DARL 80V 1A SOT223
Stock
469,849
In Stock :
469,849

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Current Rating :
1A
Collector Emitter Breakdown Voltage :
80V
Number of Elements :
1
Radiation Hardening :
No
Surface Mount :
yes
REACH SVHC :
No SVHC
Voltage - Rated DC :
80V
Lead Free :
Lead Free
Published :
1997
Emitter Base Voltage (VEBO) :
5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 500mA 10V
Number of Terminations :
4
Number of Pins :
4
Width :
3.5mm
Vce Saturation (Max) @ Ib, Ic :
1.3V @ 500μA, 500mA
Power Dissipation :
1.25W
Terminal Position :
Dual
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
260
Halogen Free :
Halogen Free
Base Part Number :
BSP52
Polarity :
NPN
JESD-609 Code :
e3
Collector Emitter Voltage (VCEO) :
80V
Max Collector Current :
1A
Collector Emitter Saturation Voltage :
1.3V
Current - Collector Cutoff (Max) :
10μA
Time@Peak Reflow Temperature-Max (s) :
40
Case Connection :
COLLECTOR
Max Breakdown Voltage :
80V
Max Power Dissipation :
800mW
Transistor Application :
SWITCHING
Length :
6.5mm
Element Configuration :
Single
Transistor Type :
NPN - Darlington
Operating Temperature :
-65°C~150°C TJ
Pbfree Code :
yes
Factory Lead Time :
11 Weeks
Transistor Element Material :
SILICON
Height :
1.57mm
Collector Base Voltage (VCBO) :
90V
Mounting Type :
Surface Mount
Package / Case :
TO-261-4, TO-261AA
Terminal Finish :
Tin (Sn)
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Packaging :
Tape and Reel (TR)
Pin Count :
4
Datasheets
BSP52T3G
Introducing Transistors - Bipolar (BJT) - Single onsemi BSP52T3G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Number of Pins:4, Base Part Number:BSP52, Operating Temperature:-65°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-261-4, TO-261AA, BSP52T3G pinout, BSP52T3G datasheet PDF, BSP52T3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BSP52T3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BSP52T3G


NPN - Darlington -65°C~150°C TJ 10μA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

BSP52T3G Overview


DC current gain in this device equals 2000 @ 500mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.3V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.3V @ 500μA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.

BSP52T3G Features


the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A


BSP52T3G Applications


There are a lot of ON Semiconductor
BSP52T3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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