BSP50
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- Mfr.Part #
- BSP50
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 45V 0.8A SOT223-4
- Stock
- 4,880
- In Stock ：
- 4,880
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 39 Weeks
- Polarity :
- NPN
- Max Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 45V
- Radiation Hardening :
- No
- Number of Terminations :
- 4
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Width :
- 3.5mm
- Transition Frequency :
- 200MHz
- Length :
- 6.5mm
- hFE Min :
- 2000
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Breakdown Voltage :
- 45V
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 45V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 1W
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 50nA
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- Transistor Type :
- NPN - Darlington
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Mount :
- Surface Mount
- Weight :
- 188mg
- Height :
- 1.6mm
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 60V
- Published :
- 1997
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 1.3V
- Max Collector Current :
- 800mA
- Element Configuration :
- Single
- Base Part Number :
- BSP50
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Transistor Element Material :
- SILICON
- Current Rating :
- 800mA
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BSP50
NPN - Darlington -55°C~150°C TJ 50nA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP50 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 500mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.3V @ 500μA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
BSP50 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 200MHz
BSP50 Applications
There are a lot of ON Semiconductor
BSP50 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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