BSP50H6327XTSA1

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Mfr.Part #
BSP50H6327XTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN DARL 45V 1A SOT223-4
Stock
27,200
In Stock :
27,200

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Current :
1A
Supplier Device Package :
PG-SOT223-4
Max Collector Current :
1A
Frequency - Transition :
200MHz
Max Operating Temperature :
150°C
Max Power Dissipation :
1.5W
Number of Elements :
1
Current - Collector Cutoff (Max) :
10μA
Power - Max :
1.5W
Collector Emitter Breakdown Voltage :
45V
Polarity :
NPN
Transistor Type :
NPN - Darlington
Mount :
Surface Mount
Vce Saturation (Max) @ Ib, Ic :
1.8V @ 1mA, 1A
Package / Case :
TO-261-4, TO-261AA
Length :
6.5mm
Mounting Type :
Surface Mount
Max Breakdown Voltage :
45V
Emitter Base Voltage (VEBO) :
5V
Voltage :
45V
Factory Lead Time :
26 Weeks
Operating Temperature :
150°C TJ
Packaging :
Tape and Reel (TR)
Current - Collector (Ic) (Max) :
1A
RoHS Status :
ROHS3 Compliant
Published :
2007
Voltage - Collector Emitter Breakdown (Max) :
45V
Min Operating Temperature :
-65°C
Collector Emitter Voltage (VCEO) :
1.3V
Element Configuration :
Single
Collector Emitter Saturation Voltage :
1.8V
hFE Min :
1000
Number of Pins :
4
Width :
3.5mm
Height :
1.6mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 500mA 10V
Collector Base Voltage (VCBO) :
60V
Base Part Number :
BSP50
Datasheets
BSP50H6327XTSA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BSP50H6327XTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Voltage:45V, Operating Temperature:150°C TJ, Number of Pins:4, Base Part Number:BSP50, BSP50H6327XTSA1 pinout, BSP50H6327XTSA1 datasheet PDF, BSP50H6327XTSA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BSP50H6327XTSA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSP50H6327XTSA1


NPN - Darlington 150°C TJ 10μA 1 Elements TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

BSP50H6327XTSA1 Overview


This device has a DC current gain of 2000 @ 500mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.8V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.As a result, it can handle voltages as low as 45V volts.Single BJT transistor comes in a supplier device package of PG-SOT223-4.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.The maximum collector current is 1A volts.

BSP50H6327XTSA1 Features


the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the emitter base voltage is kept at 5V
the supplier device package of PG-SOT223-4


BSP50H6327XTSA1 Applications


There are a lot of Infineon Technologies
BSP50H6327XTSA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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